Assignors: WILMINGTON TRUST, NATIONAL ASSOCIATION Assigned to GLOBALFOUNDRIES U.S. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assigned to WILMINGTON TRUST, NATIONAL ASSOCIATION reassignment WILMINGTON TRUST, NATIONAL ASSOCIATION SECURITY AGREEMENT Assignors: GLOBALFOUNDRIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INTERNATIONAL BUSINESS MACHINES CORPORATION Assigned to GLOBALFOUNDRIES INC. 2 LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by International Business Machines Corp filed Critical International Business Machines Corp Priority to US11/121,454 priority Critical patent/US7202136B2/en Publication of US20050233534A1 publication Critical patent/US20050233534A1/en Application granted granted Critical Publication of US7202136B2 publication Critical patent/US7202136B2/en Assigned to GLOBALFOUNDRIES U.S. Original Assignee International Business Machines Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Voldman Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US11/121,454 Other versions US20050233534A1 Google Patents Silicon germanium heterojunction bipolar transistor with carbon incorporationÄownload PDF Info Publication number US7202136B2 US7202136B2 US11/121,454 US12145405A US7202136B2 US 7202136 B2 US7202136 B2 US 7202136B2 US 12145405 A US12145405 A US 12145405A US 7202136 B2 US7202136 B2 US 7202136B2 Authority US United States Prior art keywords carbon region boron base semiconductor layer Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US7202136B2 - Silicon germanium heterojunction bipolar transistor with carbon incorporation US7202136B2 - Silicon germanium heterojunction bipolar transistor with carbon incorporation
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